$A$ semiconductor has equal electron and hole concentration of $6 \times 10^8 \, m^{-3}$. On doping with a certain impurity,the electron concentration increases to $9 \times 10^{12} \, m^{-3}$. The new hole concentration is:

  • A
    $2 \times 10^4 \, m^{-3}$
  • B
    $2 \times 10^2 \, m^{-3}$
  • C
    $4 \times 10^4 \, m^{-3}$
  • D
    $4 \times 10^2 \, m^{-3}$

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